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Preliminary
Product Description
Sirenza Microdevices' SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4-2.7 GHz bands. It can run from a 3V to 5V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. This product features a RoHS compliant and Green package with matte tin finish, designated by the `Z' suffix.
SZM-2066Z
2.4-2.7GHz 2W Power Amplifier
RoHS Compliant & Green Package
Pb
6mm x 6mm QFN Package
Functional Block Diagram
Vcc = 5V
RFIN
RFOUT
Vbias = 5V
Stage 1 Bias
Stage 2 Bias
Stage 3 Bias
* * * * * * * *
Product Features
P1dB = 33.5dBm @ 5V Three Stages of Gain: 37dB 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 690mA Active Bias with Adjustable Current On-chip Output Power Detector Low Thermal Resistance Power up/down control < 1s
Applications
P ower Up/Dow n Control P ower Detector
* *
802.16 WiMAX Driver or Output Stage 802.11b/g WLAN, WiFi
Key Specifications
Symbol fO P1dB S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Parameters: Test Conditions, 2.5-2.7GHz App circuit, Z0 = 50, VCC = 5.0V, Iq = 583mA, TBP = 30C Frequency of Operation Output Power at 1dB Compression - 2.7GHz Small Signal Gain - 2.7GHz Output power at 2.5% EVM 802.11g 54Mb/s - 2.7GHz Third Order Suppression (Pout=23dBm per tone) - 2.7GHz Noise Figure at 2.7 GHz Worst Case Input Return Loss 2.5-2.7GHz Worst Case Output Return Loss 2.5-2.7GHz Output Voltage Range for Pout=10dBm to 33dBm Quiescent Current (Vcc = 5V) Power Up Control Current (Vpc=5V, ( IVPC1 +IVPC2+ IVPC3 ) Vcc Leakage Current (Vcc = 5V, Vpc = 0V) Thermal Resistance (junction - lead) Unit MHz dBm dB dBm dBc dB dB V mA mA A C/W 10 503 7.5 12.5 Min. 2500 32.0 32.2 33.5 33.7 26.0 -45 7.7 10.5 15.5 0.9 to 1.8 583 4 50 663 -40 Typ. Max. 2700
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Typical Performance with appropriate app circuit(Vcc=5V, Icq=583mA, * 802.11g 54Mb/s 64QAM)
Parameter Gain @ Pout=26dBm P1dB Pout @ 2.5% EVM* Current @ Pout 2.5% EVM* Input Return Loss Output Return Loss Units dB dBm dBm mA dB dB **2.4GHz 37.5 34.6 27 703 -12.1 -27 2.5GHz 36.9 33.5 26 710 -11.5 -15.6 2.6GHz 36.5 33.5 26 700 -10.8 -28 2.7GHz 34.6 33.9 26.5 712 -10.5 -18.5
**Measured with 2.4-2.5GHz Appication circuit. See page 11 for details.
Absolute Maximum Ratings
Parameters VC3 Collector Bias Current (IVC3) VC2 Collector Bias Current (IVC2) VC1 Collector Bias Current (IVC1) ****Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) ***Max CW RF output Power for 50 ohm continuous long term operation Max CW RF Input Power for 50 ohm output load Max CW RF Input Power for 10:1 VSWR RF out load Storage Temperature Range Operating Junction Temperature (TJ) ESD Human Body Model Value 1500 500 150 9.0 6 -40 to +85 30 26 5 -40 to +150 +150 1000 Unit mA mA mA V W C dBm dBm dBm C C V
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH' j-l
*** With specified application circuit. **** No RF Drive
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Pin Out Description
Pin # 7, 11,12, 22, 29, 31, 39, 40 1,10, 21, 30 2 3 4-5 6 8 Function NC GND VC1 VBIAS12 R1A-R2A RFIN VPC1 Description These are no connect (NC) pins and are not wired inside the package. It is recommended to connect them as shown in the application circuit to achieve the stated performance. These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground them external to the package to achieve the specified performance. This is the collector of the first stage. This is the supply voltage for the active bias circuit of the 1st and 2nd stages. A resistor is tied across these pins internal to the package. This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin. Power up/down control pin for the 1st stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. Power up/down control pin for the 2nd stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. These two pins are connected internal to the package and connect to the 2nd stage collector. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern, pg. 13. These pins have capacitors across them internal to the package as shown in the below schematic. They are used as tuning and RF coupling elements between the 2nd and 3rd stage. These are the connections to the base of the 3rd stage output device. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern, pg. 13. Power up/down control pin for the 2nd stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 32 by more than 0.5V unless the supply current from pin 33 is limited < 10mA. This is the output port for the power detector. It samples the power at the input of the 3rd stage. These are the RF output pins and DC connections to the 3rd stage collector. This is the supply voltage for the active bias circuit of the 3rd stage.
9
VPC2
13, 38 14-15 17-18 33-34 36-37 16,35 19 20 23-28 32
VC2A, VC2B C1A-C2A C3A-C4A C4B-C3B C2B-C1B VB3A, VB3B VPC3 VDET RFOUT VBIAS3
Simplified Device Schematic
C3B VBIAS3 VC2B VB3B C1B C2B C4B NC NC NC 31 30
40 GND VC1 VBIAS12 R1A R2A RFIN NC VPC1 VPC2 GND 10 11 C1A C2A C3A VC2A VB3A C4A VPC3 NC NC 1
GND NC RFOUT RFOUT RFOUT RFOUT RFOUT RFOUT NC
21 20 VDET
GND
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 556mA, T=25C)
EVM vs Pout T=+25c 802.11g, OFDM 54Mb/S, 64QAM
5.0 4.5 4.0 3.5 EVM(%) EVM(%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 18 20 22 Pout(dBm) 24
2.5GHz
EVM vs Pout F=2.4GHz 802.11g, OFDM 54Mb/S, 64QAM
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 26 28 30 12 14 16 18 -40c 20 22 Pout(dBm) +25c 24 +85c 26 28 30
2.4GHz
EVM vs Pout F=2.5GHz 802.11g, OFDM 54Mb/S, 64QAM
5.0 4.5 4.0 3.5 EVM(%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 18 -40c 20 22 Pout(dBm) +25c 24 +85c 26 28 30 -60 -65 18 IM3(dBc) -30 -35 -40 -45 -50 -55
IM3 vs Pout (2 Tone Avg.),T=+25c Tone Spacing = 1MHz
20
22 Pout(dBm)
2.4GHz
24
2.5GHz
26
28
Typical Gain vs Pout, F=2.4GHz 41 40 39 38 Gain(dB) Gain(dB) 37 36 35 34 33 32 31 16 18 20 22 24 26 28 Pout(dBm)
+25c
Typical Gain vs Pout, F=2.5GHz 41 40 39 38 37 36 35 34 33 32 31 30 32 34 36 16 18 20 22 24 26 28 Pout(dBm)
+25c
30
+85c
32
34
36
-40c
+85c
-40c
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 556mA, T=25C)
Narrow band S11 - Input Return Loss
0 -45
Narrow band S12 - Reverse Isolation
-5
-50
-10
-55
S11(dB)
S12(dB)
-15
-60
-20
-65
-25
-70
-30 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
-75 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
Narrow band S21 - Forw ard Gain
40 38 36 0 -5 -10
Narrow band S22 - Output Return Loss
S21(dB)
34 32 30 28 26 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
S22(dB)
-15 -20 -25 -30 -35 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
DC Supply Current vs Pout, T=+25C
1.1 1.0 0.9 Idc(A) Idc(A) 0.8 0.7 0.6 0.5 0.4 16 18 20 22 2.4GHz 24 26 Pout(dBm) 28 30 32 34 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 16 18
DC Supply Current vs Pout, F=2.4GHz
20
22 -40c
2.5GHz
24 26 Pout(dBm) +25c
28 +85c
30
32
34
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 556mA, T=25C)
RF Power Detector (Vdet) vs Pout, F=2.4GHz
1.4
10.00
Noise Figure vs Frequency
1.3 1.2 Vdet(V) 1.1 1.0 0.9 0.8 16 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34
NF(dB)
9.50 9.00 8.50 8.00 7.50 7.00 6.50 6.00 5.50 5.00 2.40
2.42
2.44
2.46
2.48
2.50
Frequency(GHz) -40C +25C +85C
Broadband S11 - Input Return Loss
0 -45
Broadband S12 - Reverse Isolation
-5
-50
-55
S11(dB)
S12(dB)
-10
-60
-15
-65 -20
-70
-25 0.0 1.0 2.0 3.0 4.0 5.0 6.0
-75 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
Broadband S21 - Forward Gain
40 38 36 0 -5 -10
Broadband S22 - Output Return Loss
S21(dB)
S22(dB)
34 32 30 28 26 0.0 1.0 2.0 3.0 4.0 5.0 6.0
-15 -20 -25 -30 -35 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 583mA, T=25C)
EVM vs Pout T=+25c 802.11g, OFDM 54Mb/S, 64QAM
5 4.5 4 3.5 EVM(%) EVM(%) 3 2.5 2 1.5 1 0.5 0 12 14 16 18
2.5GHz
EVM vs Pout F=2.5GHz 802.11g, OFDM 54Mb/S, 64QAM
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
20 22 Pout(dBm)
2.6GHz
24
2.7GHz
26
28
12
14
16
18 -40c
20 Pout(dBm) +25c
22 +85c
24
26
28
EVM vs Pout F=2.7GHz 802.11g, OFDM 54Mb/S, 64QAM
-35 5.0 4.5 4.0 3.5 EVM(%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 20 22 24 Pout(dBm) -40c +25c +85c 18 26 28 -65 18 IM3(dBc) -45 -50 -55 -60 -40
IM3 vs Pout (2 tone avg.), F=2.5GHz
20
22 Pout(dBm) -40c +25c
24 +85c
26
28
IM3 vs Pout (2 tone avg.), F=2.7GHz
-35 -35 -40 -40 -45 IM3(dBc) -50 -55 -60 -65 18 20 22 -40c 24 Pout(dBm) +25c +85c 26 28 IM3(dBc) -45 -50 -55 -60 -65 18
IM3 vs Pout (2 Tone Avg.),T=+25c Tone Spacing = 1MHz
20
2.5GHz
22 Pout(dBm)
2.6GHz
24
26
2.7GHz
28
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 583mA, T=25C)
Narrow band S11 - Input Return Loss
0
-45
Narrow band S12 - Reverse Isolation
-5
-50
-55
S11(dB)
S12(dB)
-10
-60
-15
-65
-20
-70
-25 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
-75 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
Narrow band S21 - Forw ard Gain
40 38 -10 36 -5
Narrow band S22 - Output Return Loss
S21(dB)
34 32 30
S22(dB)
-15
-20
-25 28 26 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 -30 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
DC Supply Current vs Pout, F=2.5GHz
1.5 1.4 1.3 1.2 Idc(A) Idc(A) 1.1 1 0.9 0.8 0.7 0.6 0.5 16 18 20 22 24 26 Pout(dBm) -40c +25c 28 +85c 30 32 34 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 16 18
DC Supply Current vs Pout, F=2.7GHz
20
22 -40c
24 26 Pout(dBm) +25c
28 +85c
30
32
34
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 8
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 583mA, T=25C)
RF Power Detector (Vdet) vs Pout, F=2.5GHz
1.8 1.7 1.6 1.5 Vdet(V) Vdet(V) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 16 18 20 22 24 26 Pout(dBm) -40c +25c 28 +85c 30 32 34 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 16 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34
RF Power Detector (Vdet) vs Pout, F=2.7GHz
Icq vs Vpc, Vcc=5V, swept Vpc
See App. Circuit pg. 12 for Vpc resistor value used
0.6 0.55 0.5 0.45 0.4
9.5 9 8.5 10
Noise Figure vs Frequency
Icq(A)
0.3 0.25 0.2 0.15 0.1 0.05 0 3 3.5 4 4.5 5
NF(dB)
0.35
8 7.5 7 6.5 6 5.5 5 2.50
2.55
2.60
2.65
2.70
Vpc(V) -40c +25c +85c
Frequency(GHz) -40C +25C +85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 9
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 583mA, T=25C)
Broadband S11 - Input Return Loss
0
Broadband S12 - Reverse Isolation
-45
-5
-50
-55
S11(dB)
S12(dB)
-10
-60
-15
-65
-20
-70
-25 0.0 1.0 2.0 3.0 4.0 5.0 6.0
-75 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
Broadband S21 - Forward Gain
40 38 36
Broadband S22 - Output Return Loss
0
-5
-10
S21(dB)
34 32 30 28 26 0.0 1.0 2.0 3.0 4.0 5.0 6.0
S22(dB)
-15
-20
-25
-30 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz) -40C +25C +85C
Frequency(GHz) -40C +25C +85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 10
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
2.4-2.5 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 5.0V
2.4-2.5 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 5.0V
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper
C1 C7 C3 R7 C6 L3 L2 R6 C5 L1 Q1 C8 C4 C2 C9
R5 R1 R2 R3 R4
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 11
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
2.5-2.7 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 5.0V
2.5-2.7 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 5.0V
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper
C1 C7 C3 R7 C6 L3 L2 R6 C5 L1 Q1 C8 C4 C2 C9
R5 R1 R2 R3 R4
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 12
http://www.sirenza.com EDS-104641 Rev C
Preliminary SZM-2066Z 2.4-2.7GHz 2W Power Amp
Part Symbolization
The part will be symbolized with "SZM-2066Z" to designate it as a RoHs green compliant product. Marking designator will be on the top surface of the package.
Part Number Ordering Information
Part Number SZM-2066Z Reel Size 13" Devices/Reel 3000
Package Outline Drawing (dimensions in mm):
Recommended Metal Land Pattern (dimensions in mm[in]):
Recommended PCB Soldermask for Land Pattern (dimensions in mm[in]):
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 13
http://www.sirenza.com EDS-104641 Rev C

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